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High Density Evaporation Stack for OFETs

Enabling accurate deposition resolution


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The evaporation stack holds the source-drain shadow masks (sold separately) and substrates in close contact for thermal evaporation. This is crucial for device fabrication because the source-drain channel is the most critical feature on an OFET. For use with the and .

Specifications


The key component is the lower support, which is milled from a solid block of aluminum to provide high-precision recesses for individual shadow masks and substrates, and allows mixing-and-matching of shadow masks within a single evaporation.

Size 75 mm x 75 mm
Thickness 2 mm (exc. bolts)
Material Lower support: milled aluminum
Lid: stainless steel
Magnetic sheet: vinyl-laminated polymer resin with ferrite powder
Substrate capacity Square design: 12 substrates
Magnified example of high-density OFET source-drain mask within completed stack.

System Overview


Schematic diagrams showing how the high-density FET evaporation masks work together for:

A back-gate FET on a Si/SiO2 substrate.
A back-gate FET on any substrate.
A front-gate FET on any substrate.

For interdigitated FETs, the source-drain, active area, and gate masks need to be replaced with the corresponding versions.

Resources and Support


How to load the High density OFET stack

This video demonstrates how to load the high density OFET stack typically used to thermally evaporate (vacuum deposit) source-drain contacts. The video shows how to carefully place the evaporation masks into the substrate holder.

Evaporation Stack for OFETs, High Density

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$ 47.30

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